功率半导体英文翻译

Question

除了芯片性能的改进外，外壳包装技术也有了很大突破，IR在发展倒置场效应晶体管，又称"FlipFET"的基础上，今年又推出了DirectFET，如图六所示。其源极和栅极倒置因而可直接焊在印刷线路板上，漏极则焊在其顶部的金属壳上，必要时可以按上散热器或直接与设备外壳接触。DirectFET的尺寸相当于传统的SO-8塑封(塑封面积约4x5平方毫米)外壳。在这么小的器件中，第一次采用了双面散热结构。它是一个没有引线框架，没有引线焊点的器件，因此带来了一系列优点:它的不带芯片的封装电阻(DFPR)仅为0。1mW,器件厚度仅为0。7mm，热阻和寄生电感都大为下降。这种特性使它特别适用于上面提到的电脑最新代的CPU中。在多相电路中，每个相仅用两个DirectFET即可输送30安电流。其电流上升率达每微妙400安，工作频率为1-2兆赫。
其次，必须着重介绍一下功率半导体器件中的IC方向:由于MOSFET和IGBT的发展，和它们配套以提供触发信号的功率集成电路PIC(Power IC)也随之迅速发展起来。 当时又称为MOS栅驱动器MGD(MOS Gate Driver)或控制集成电路CIC (Control IC)。 随着应用范围的扩大:如马达驱动，调光，各种电源等等，CIC的品种也有了迅速增加。而这些CIC在发展过程中
，又逐渐由简单的触发功能向各种应用的特殊需要发展。早期的PIC主要是指可以在高压下使用的IC，所以又称高压集成电路(HVIC)。但目前很多应用，如通信，电脑，可携带电源等，它们并不要求有很高的电压，却要求能针对特殊需要发展专用集成电路。因为它们和功率半导体器件结合应用，我们还是把它们列入了功率半导体器件一类。所以现在在功率半导体器件大家族中，有许多集成电路。其中很多集成电路内带有功率器件，有的则把功率器件分立在外。从这一点来说，功率和微电子的界限变得逐渐模糊。如电脑电源中大量应用的电压调制器件LDO(Low Drop Out)即为一例。它也不属于开关应用。
由于大量集成电路进入了功率半导体器件，因而考虑把集成电路和功率半导体器件做在同一个芯片或器件中的思路自然就发展了。做在同一芯片中，原来就是功率集成电路的概念，但其功率常比较小。而做在同一包装中，功率容量易于增大，一些无源元件也有可能加入，在这儿常称为多芯片模块(MCM)。
IR公司去年发展起来的iPOWIR是一种典型的多芯片模块。它将功率器件，控制用的集成电路，或再加上脉宽调制(PWM)的集成电路，按电源设计的需要，用BGA的封装技术组合在同一个器件中(如图七所示)。这种多芯片的器件大大简化了电源设计人员的工作。减小了元件数及所占的面积，性能上也有了很多改进。iPOWIR的发展，被认为是DC-DC变换的未来。但实际上，在其他各种应用领域，只要有进一步集成化的要求， MCM的结构都会出现并且会愈来愈多。所以它将是整个功率半导体器件的重要发展方向。
在上面的介绍中，已经提到MOSFET的发展为4C产业的发展提供了重要的基础。而这4C产业，目前恰恰又是最活跃的产品方向。大家可以理解:在通信，电脑，消费电子及汽车的发展中，将需要有许多许多和IC紧密联系的各种类型的功率半导体器件。这方面每一个都可以用很大的篇幅来介绍。这里就不再详述了。
结语
综上所述，功率半导体器件这些年来，不断地发生了很大的变化。所以不能再以固定的眼光去看待功率半导体器件的发展。例如不要简单地把功率半导体器件和可控硅画等号，或只和分立器件画等号。也不要把功率半导体和微电子器件人为地分离开来，似乎半导体中只有微电子。这些都会妨碍功率半导体器件的发展，长期来说也会妨碍微电子器件的发展。在发展战略上，要避免把功率半导体器件列为仅需简陋工艺就可以完成的低技术产品。而把优惠政策只提供给集成电路行业。我国至今没有很好地发展现代功率半导体器件，缺乏对现代功率半导体器件的全面了解恐怕是一个因素。在信息化带动工业化的浪潮中，必须让不同的半导体器件都有一个均衡的发展。

Answer 1

In addition to improvements in chip performance, the shell packaging technology is also a great breakthrough, IR inversion in the development of field-effect transistor, also known as "FlipFET" on the basis of this year introduced the DirectFET, as shown in Figure 6. Its source and gate inversion result can be directly welded in the printed circuit board, the drain at the top of the weld metal in its shell, if necessary, by the radiator or direct contact with the equipment enclosure. DirectFET size equivalent to the traditional SO-8 plastic (plastic with an area of about 4x5 mm2) shell. In such a small device, the first structure of a double-sided cooling. It is a lead frame, no-lead solder joints of the device, it brought about a series of advantages: it's non-resistor chip package (DFPR) is only 0. 1mW, device thickness of only 0. 7mm, resistance and parasitic inductance have dropped significantly. Such characteristics make it especially suitable for the above-mentioned computer of the latest generation of CPU. In the multi-phase circuits, each with only two of 30 security DirectFET can transfer current. Increase its current rate of 400 per delicate security, the working frequency of 1-2 MHz.
Secondly, you must be focused on power semiconductor devices in the IC direction: as a result of the development of MOSFET and IGBT, and their matching to provide a trigger signal power integrated circuit PIC (Power IC) have also developed rapidly. At that time, also known as MOS gate drive MGD (MOS Gate Driver) or control integrated circuit CIC (Control IC). With the expansion of the scope of application: such as motor drives, lighting, various power supply and so on, CIC of the cultivars have been rapidly increasing. These CIC in the development process
And gradually from a simple function to trigger the special needs of a wide range of applications development. PIC is the earliest that can be used in high voltage IC, therefore, also known as high-voltage IC (HVIC). However, many applications such as communications, computers, portable power supply and so on, they do not require high voltage, but demand for the special needs of the development of application specific integrated circuit. Because of their combination and application of power semiconductor devices, we have the power to include them in a class of semiconductor devices. So now the power semiconductor devices in the family, there are many integrated circuits. Many of these power devices with integrated circuits inside, some outside while the separation of power devices. Judging from this point, the limits of power and microelectronics has become increasingly blurred. If a large number of computer applications in power modulation device voltage LDO (Low Drop Out) is one example. It does not belong to switch applications.
As a result of a large number of integrated circuits into the power semiconductor devices, which consider the power semiconductor integrated circuits and devices to do the same in the chip or device on the development of the natural line of thought. Done in the same chip, the original is the concept of power integrated circuits, but their power often relatively small. Done in the same package, easy to increase power capacity, a number of passive components is also possible to join, here often called multi-chip module (MCM).
IR last year iPOWIR developed is a typical multi-chip module. It will power devices to control the use of integrated circuits, or in combination with pulse-width modulation (PWM) integrated circuit, according to the needs of power supply design, using BGA packaging technology portfolio in the same device (as shown in Figure 7) . Multi-chip device that greatly simplifies the power supply design staff. Components reduces the number and percentage of the area, there has been a lot of performance improvement. iPOWIR development is considered DC-DC conversion of the future. But, in fact, a wide range of applications in other fields, as long as the requirements of further integration, MCM structure and will there will be more and more. Therefore, it is the power semiconductor devices important direction of development.
In the above presentation, the development of MOSFET has been referred to as 4C industry provides an important foundation. 4C industries which, at present it is the most active direction of the product. We can understand: in the communications, computer, consumer electronics and automotive development, will require many, many close contacts and IC of all types of power semiconductor devices. Each of these aspects can be used to introduce a lot of space. Not detailed here.
Add: Conclusion
To sum up, the power semiconductor devices the past few years, constantly changed a lot. So can no longer look at a fixed vision of the development of power semiconductor devices. For example, not simply thyristor power semiconductor devices and an equal sign painting, or drawing an equal sign and discrete devices. Must not power semiconductor devices and microelectronics artificially separated, it seems only semiconductor microelectronics. These will impede the development of power semiconductor devices, in the long run will hinder the development of microelectronic devices. Development strategy in order to avoid the power semiconductor devices as a simple process only to be completed on the low-tech products. And the preferential policies available only to integrated circuit industry. China has not been very good to the development of modern power semiconductor devices, the lack of modern power semiconductor devices is a comprehensive understanding of the factors I am afraid. Information technology to stimulate industrialization in the wave, it is imperative that different semiconductor devices have a balanced development.
Conclusion
To sum up, the power semiconductor devices the past few years, constantly changed a lot. So can no longer look at a fixed vision of the development of power semiconductor devices. For example, not simply thyristor power semiconductor devices and an equal sign painting, or drawing an equal sign and discrete devices. Must not power semiconductor devices and microelectronics artificially separated, it seems only semiconductor microelectronics. These will impede the development of power semiconductor devices, in the long run will hinder the development of microelectronic devices. Development strategy in order to avoid the power semiconductor devices as a simple process only to be completed on the low-tech products. And the preferential policies available only to integrated circuit industry. China has not been very good to the development of modern power semiconductor devices, the lack of modern power semiconductor devices is a comprehensive understanding of the factors I am afraid. Information technology to stimulate industrialization in the wave, it is imperative that different semiconductor devices have a balanced development.